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Results: 218,524
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Emtsev, V., Emtsev Jr., V. V., Poloskin, D. S., Sobolev, N. A., Shek, E. I., Michel, J., & Kimerling, L. C. (1999). Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium, (In: Semicond.). Semiconductors, 33, 603-605. https://doi.org/10.1134/1.1187737
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Ammerlaan, C. A. J., Thao, D. T. X., & Gregorkiewicz, T. (1999). Photoluminescence of erbium-doped silicon: excitation power dependence, (In: Semicond.). Semiconductors, 33, 598-602. https://doi.org/10.1134/1.1187736
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Emtsev, V., Emtsev Jr., V. V., Poloskin, D. S., Shek, E. I., Sobolev, N. A., Michel, J., & Kimerling, L. C. (1999). Oxygen and erbium related donor centers in Czochralski grown silicon implanted with erbium, (in: Semicond.). Semiconductors, 33, 1084-1087. https://doi.org/10.1134/1.1187870
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Huy, P. T., Ammerlaan, C. A. J., & Gregorkiewicz, T. (1999). Atomic and electronic structure of hydrogen-passivated double selenium donors in silicon. Physica B-Condensed Matter, 273-274, 239-242. https://doi.org/10.1016/S0921-4526(99)00462-7
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Emtsev, V., Emtsev Jr., V. V., Poloskin, D. S., Shek, E. I., Sobolev, N. A., Michel, J., & Kimerling, L. C. (1999). Impurity effects in silicon implanted with rare-earth ions, Physica B-Condensed Matter, 273-274, 346-349. https://doi.org/10.1016/S0921-4526(99)00473-1
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Zhao, T., Xiao, Q., Zhang, Z. D., Dahlgren, M., Grossinger, R., Buschow, K. H. J., & de Boer, F. R. (1999). Effect of magnetocrystalline anisotropy on the magnetic properties of Fe-rich R-Fe-B nanocomposite magnets. Applied Physics Letters, 75(15), 2298-2300. https://doi.org/10.1063/1.124996
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