Evaluation of free carrier losses to 1.54 mu m emission in Si/Si: Er nanolayers on SOI substrate for optical gain observation
| Authors | |
|---|---|
| Publication date | 2011 |
| Journal | Optical Materials |
| Volume | Issue number | 33 | 7 |
| Pages (from-to) | 1094-1096 |
| Organisations |
|
| Abstract |
In this study we use a combination of variable stripe and shifting excitation spot methods to evaluate linear low temperature (4.2 K) optical properties of Si/Si:Er multinanolayer grown on SOI substrate. In particular, Er-1 luminescence at 1.54 μm under continuous wave excitation was examined. Absorption coefficients of 22.4 ± 4.2 and 45.1 ± 4.2 cm−1 at photon fluxes of 2.4 × 1019 and 2.4 × 1020 cm2 s−1, respectively, have been established. These are approximately three times higher than those found earlier for a similar structure grown on Si substrate. |
| Document type | Article |
| Language | English |
| Published at |
https://doi.org/10.1016/j.optmat.2010.08.025
(Final published version)
|
| Permalink to this page | |
