Search results
Results: 8
Number of items: 8
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Ha, N. N., Giang, N. T., Khiem, T. N., Dung, N. D., & Gregorkiewicz, T. (2016). Spectral probing of carrier traps in Si–Ge alloy nanocrystals. Physica Status Solidi - Rapid Research Letters, 10(11), 824-827. https://doi.org/10.1002/pssr.201600304
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Ha, N. N., Nishikawa, A., Fujiwara, Y., & Gregorkiewicz, T. (2016). Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method. Journal of Science: Advanced Materials and Devices, 1(2), 220-223. https://doi.org/10.1016/j.jsamd.2016.06.004 -
Ha, N. N., Giang, N. T., Thuy, T. T. T., Trung, N. N., Dung, N. D., Saeed, S., & Gregorkiewicz, T. (2015). Single phase Si1-xGe(x) nanocrystals and the shifting of the E1 direct energy transition. Nanotechnology, 26(37), Article 375701. https://doi.org/10.1088/0957-4484/26/37/375701
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Ha, N. N., Cueff, S., Dohnalová, K., Trinh, M. T., Rizk, R., Labbé, C., Yassievich, I. N., & Gregorkiewicz, T. (2011). Photon cutting for excitation Er3+ions in SiO2 sensitized by Si qunatum dots. Physical Review B, 84(24). https://doi.org/10.1103/PhysRevB.84.241308
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Ha, N. N., Dohnalová, K., & Gregorkiewicz, T. (2011). Evaluation of free carrier losses to 1.54 mu m emission in Si/Si: Er nanolayers on SOI substrate for optical gain observation. Optical Materials, 33(7), 1094-1096. https://doi.org/10.1016/j.optmat.2010.08.025
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Ha, N. N., Dohnalová, K., Gregorkiewicz, T., & Valenta, J. (2010). Optical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers. Physical Review B, 81(19), 195206. https://doi.org/10.1103/PhysRevB.81.195206
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Vinh, N. Q., Ha, N. N., & Gregorkiewicz, T. (2009). Photonic properties of Er-doped crystalline silicon. Proceedings of the IEEE, 97(7), 1269-1283. https://doi.org/10.1109/JPROC.2009.2018220
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