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Results: 248
Number of items: 248
  • Forcales Fernandez, M., Bradley, I. V., Wells, J. P. R., & Gregorkiewicz, T. (2001). Temporal characteristics of the optical storage effect in Si:Er. Diffusion and defect data, solid state data. Part B, Solid state phenomena, 82, 623-628.
  • Pawlak, B., Gregorkiewicz, T., Ammerlaan, C. A. J., Takkenberg, W., Tichelaar, F. D., & Alkemade, P. F. A. (2001). Experimental investigation of band structure modification in silicon nanocrystals. Physical Review B, 64(11), Article 115308. https://doi.org/10.1103/PhysRevB.64.115308
  • Gregorkiewicz, T., Thao, D. T. X., Langer, J. M., Bekman, H. H. P. T., Bresler, M. S., Michel, J., & Kimerling, L. C. (2000). Energy Transfer Between Shallow Centers and RE Ion Core: Er3+ Ion in Silicon. Physical Review B, 61(8), 5369-5375. https://doi.org/10.1103/PhysRevB.61.5369
  • Gregorkiewicz, T., Thao, D. T. X., Langer, J. M., & Bekman, H. H. P. T. (2000). : Tracking Recombination Processes in Si:Er with a Free-Electron Laser. Journal of Luminescence, 87-89, 96-100. https://doi.org/10.1016/S0022-2313(99)00237-9
  • Thao, D. T. X., Ammerlaan, C. A. J., & Gregorkiewicz, T. (2000). Photoluminescence of Erbium-Doped Silicon: Excitation Power and Temperature Dependence. Journal of Applied Physics, 88, 1443-1455. https://doi.org/10.1063/1.373837
  • Huy, P. T., Ammerlaan, C. A. J., Gregorkiewicz, T., & Don, D. T. (2000). Hydrogen Passivation of the Selenium Double Donor: A Study by Magnetic Resonance. Physical Review B, 61(11), 7448-7458. https://doi.org/10.1103/PhysRevB.61.7448
  • Open Access
    Thao, D. T. X. (2000). Photoluminescence spectroscopy on erbium-doped and porous silicon. [Thesis, fully internal, Universiteit van Amsterdam].
  • Thao, D. T. X., Gregorkiewicz, T., & Langer, J. M. (1999). Spectroscopic Probing of Defect-Related Energy Storage in Silicon Doped with Erbium, Physica B-Condensed Matter, 273-274, 326-329. https://doi.org/10.1016/S0921-4526(99)00467-6
  • Ammerlaan, C. A. J., Thao, D. T. X., & Gregorkiewicz, T. (1999). Photoluminescence of Erbium-doped Silicon: Excitation Power Dependence. Fizika i tehnika poluprovodnikov, 33, 644-648.
  • Gregorkiewicz, T., & Langer, J. M. (1999). Lasing in Rare-Earth-Doped Semiconductors: Hopes and Facts. MRS Bulletin, 24(9), 27-31.
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