Search results
Results: 248
Number of items: 248
-
Pawlak, B., & Gregorkiewicz, T. (2001). Photoluminescence from Si:Er under front- and backside excitation. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 81(1-3), 59-61. https://doi.org/10.1016/S0921-5107(00)00727-3
-
Forcales, M., Bradley, I. V., Wells, J. P. R., & Gregorkiewicz, T. (2001). Mid-infrared induced quenching of photoluminescence in Si:Er. Materials Science and Engineering B-Advanced Functional Solid-State Materials, 81(1-3), 80-82. https://doi.org/10.1016/S0921-5107(00)00741-8
-
Klik, M. A. J., & Gregorkiewicz, T. (2001). Excitation of Si : Er with sub-band-gap energies. Physica B-Condensed Matter, 308, 348-349. https://doi.org/10.1016/S0921-4526(01)00696-2
-
Klik, M. A. J., Bradley, I. V., Wells, J. P. R., & Gregorkiewicz, T. (2001). Optically induced Auger recombination of Yb3+ in p-type InP. Physica B-Condensed Matter, 308, 884-887. https://doi.org/10.1016/S0921-4526(01)00946-2
-
Vinh, N. Q., Przybylinska, H., Krasil'nik, Z. F., Andreev, B. A., & Gregorkiewicz, T. (2001). Observation of Zeeman effect in photoluminescence of Er3+ ion in crystalline silicon. Physica B-Condensed Matter, 308, 340-343. https://doi.org/10.1016/S0921-4526(01)00693-7
-
Vinh, N. Q., Yassievich, I. N., & Gregorkiewicz, T. (2001). Erbium excitation across the bulk of silicon wafer: An Effect of p-n junction at Si/Si:Er interface. Physica B-Condensed Matter, 308, 357-360. https://doi.org/10.1016/S0921-4526(01)00699-8
-
Vinh, N. Q., Klik, M. A. J., & Gregorkiewicz, T. (2001). Time-resolved photoluminescence study of Si:Ag. Physica B-Condensed Matter, 308, 414-417. https://doi.org/10.1016/S0921-4526(01)00766-9
-
Forcales Fernandez, M., Bradley, I. V., Wells, J. P. R., & Gregorkiewicz, T. (2001). Time-resolved investigation of the mid-infrared-induced enhancement of Er3+ emission in Si. Physica B-Condensed Matter, 308, 337-339. https://doi.org/10.1016/S0921-4526(01)00692-5
Page 16 of 25