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Kulbachinskii, V. A., Kytin, V. G., Lunin, R. A., Mokerov, V. G., Senichkin, A. P., Bugaev, A. S., Karuzskii, A. L., Perestoronin, A. V., van Schaijk, R. T. F., & de Visser, A. (1999). Transport and optical properties of tin-delta-doped GaAs structures. Semiconductors, 33, 771-778. https://doi.org/10.1134/1.1187779
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Kulbachinskii, V. A., Kytin, V. G., Lunin, R. A., Golikov, A. V., Mokerov, V. G., Bugaev, A. S., Senichkin, A. P., van Schaijk, R. T. F., de Visser, A., & Koenraad, P. M. (1999). Sn delta-doping in GaAs. Semiconductor Science and Technology, 14, 1034-1041. https://doi.org/10.1088/0268-1242/14/12/304
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Breitweg (et al.), J., Bokel, C. H., Botje, M. A. J., Brummer, N. C., Engelen, J. J., Koffeman, E. N., Kooijman, P. M., van Sighem, A. I., Tiecke, H. G. J. M., Tuning, N., Verkerke, W., Vossebeld, J. H., Wiggers, L. W., & de Wolf, E. (1999). Forward jet production in deep inelastic scattering at HERA. European Physical Journal C, 6, 239-252. https://doi.org/10.1007/s100520050335
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