Search results

  • Full text

  • Document type

    • Publication year

  • Organisation

Results: 57,892
Number of items: 57,892
  • Ogley, R. N., Bell Burnell, S. J., Fender, R. P., Pooley, G. G., Waltman, E. B., & van der Klis, M. (1999). Jet wind environment of Cyg X-3. Bulletin - American Astronomical Society, 194, 110405.
  • Ammerlaan, C. A. J. (1999). Double donors and acceptors in c-Si, EMIS Datareviews series, 20, 669-675.
  • Belloni, T., Klein Wolt, M., Méndez, R. M., van der Klis, M., & van Paradijs, J. A. (1999). GRS 1915+105 between complexity and simplicity. Bulletin - American Astronomical Society, 31, 1104.
  • Hemker, P. W., Shishkin, G. I., & Shishkina, L. P. (1999). The numerical solution of a {Neumann} problem for parabolic singularly perturbed equations with high-order time accuracy. In M. Kaschiev, O. Iliev, S. Margenov, B. Sendov, & P. Vassilevski (Eds.), Recent Advances in Numerical Methods and Applications II (pp. 27-39). World Scientific.
  • Hemker, P. W., Shishkin, G. I., & Shishkina, L. P. (1999). Parallel methods based on a defect-correction technique for parabolic singularly perturbed problems. In Analytical and numerical methods for singularly perturbed problems Nuova Science Publishing House.
  • Bollmann, J., Lindner, S., Alves, E., Soares, J. C., Ammerlaan, C. A. J., Deicher, M., Knopf, M. H., Magerle, R., Stötzler, A., Henry, M. O., McGlynn, E., Burchard, A., Forkel-Wirth, D., Fanciulli, M., & Weyer, G. (1999). Identification of deep states from Au/Pt/Ir/Os impurities in silicon using radioactive transmutation, In The Physics of Semiconductors (pp. B11). World Scientific.
  • Emtsev, V., Emtsev Jr., V. V., Poloskin, D. S., Shek, E. I., Sobolev, N. A., Michel, J., & Kimerling, L. C. (1999). Rare earth impurities and impurity-related centers in silicon, Diffusion and defect data, solid state data. Part B, Solid state phenomena, 69-70, 365-370.
  • Ammerlaan, C. A. J., & Huy, P. T. (1999). Atomic structure of chalcogen-hydrogen complexes in silicon, (in: Sol State Phen). Diffusion and defect data, solid state data. Part B, Solid state phenomena, 69-70, 583-588.
  • Emtsev, V., Emtsev Jr., V. V., Poloskin, D. S., Sobolev, N. A., Shek, E. I., Michel, J., & Kimerling, L. C. (1999). Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium, (article). Fizika i tehnika poluprovodnikov, 33, 649-651.
  • Emtsev, V., Emtsev Jr., V. V., Poloskin, D. S., Sobolev, N. A., Shek, E. I., Michel, J., & Kimerling, L. C. (1999). Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium, (In: Semicond.). Semiconductors, 33, 603-605. https://doi.org/10.1134/1.1187737
Page 4740 of 5790