Atomic and electronic structure of hydrogen-passivated double selenium donors in silicon

Authors
Publication date 1999
Journal Physica B-Condensed Matter
Volume | Issue number 273-274
Pages (from-to) 239-242
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Abstract Selenium–hydrogen-related defects in silicon have been investigated by magnetic resonance. Two new electron paramagnetic resonance (EPR) spectra Si-NL60 and Si-NL61 of selenium–hydrogen complexes were observed. By application of the electron nuclear double resonance (ENDOR) and field scanned ENDOR (FSE) techniques the symmetry and spin-Hamiltonian parameters of the centers were determined. Based on the obtained information the atomic and electronic structures of the centers are discussed with two different models: one–chalcogen – one-hydrogen and one–chalcogen – two-hydrogen complexes.
Document type Article
Language English
Published at https://doi.org/10.1016/S0921-4526(99)00462-7
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