Impurity centers in silicon doped with rare-earth impurities of dysprosium, holmium, erbium, and ytterbium, (In: Semicond.)

Authors
  • V. Emtsev
  • V.V. Emtsev Jr.
  • D.S. Poloskin
  • N.A. Sobolev
  • E.I. Shek
  • J. Michel
  • L.C. Kimerling
Publication date 1999
Journal Semiconductors
Volume | Issue number 33
Pages (from-to) 603-605
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Document type Article
Published at
https://doi.org/10.1134/1.1187737 (Final published version)
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