Understanding the open circuit voltage in organic solar cells on the basis of a donor-acceptor abrupt (p-n++) heterojunction

Authors
  • J.C. Nolasco
  • A. Castro-Carranza
  • Y.A. León
  • C. Briones-Jurado
Publication date 15-05-2019
Journal Solar Energy
Volume | Issue number 184
Pages (from-to) 610-619
Number of pages 10
Organisations
  • Faculty of Science (FNWI) - Institute of Interdisciplinary Studies (ISS)
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Institute for High Energy Physics (IHEF)
Abstract

By using electrical characterization and classical solid state semiconductor device theory, we demonstrate that the open circuit voltage (Voc) in organic solar cells based on non-intentional doped semiconductors is fundamentally limited by the built-in potential (Vbi) originated at a donor-acceptor abrupt (p-n++) heterojunction in case of selective contacts. Our analysis is validated using P3HT:PCBM devices fabricated in our research group. We also demonstrate that such a result can be generalized using data already reported in literature for fullerene-based solar cells. Finally, we show that the dependence of Voc on the device contacts can be understood in terms of the potential barriers formed by the Fermi level alignment of semiconductors at the heterojunction and at the Schottky junctions.

Document type Article
Note With supplementary file
Language English
Published at https://doi.org/10.1016/j.solener.2019.04.031
Other links https://www.scopus.com/pages/publications/85064232002
Permalink to this page
Back