Edgeless planar semiconductor sensors for a Medipix3-based radiography detector

Open Access
Authors
  • M.J. Bosma
  • E. Heijne
  • J. Kalliopuska
  • J. Visser
Publication date 11-2011
Journal Journal of Instrumentation
Article number C11019
Volume | Issue number 6 | 11
Number of pages 6
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Institute for High Energy Physics (IHEF)
Abstract

We study the influence of active edges on the response of edge pixels by comparing simulations of the electrostatic-potential distribution to position-defined measurements on the energy deposition. A laser setup was used to measure the edge-pixel response function and shows the sensitive edge is only about 2 μm from the physical edge. 3D reconstruction of tracks from high-energy pions and muons, produced at the SPS H6 test beam facility at CERN, enabled to relate the energy deposition at edge pixels to the particle's interaction depth. A clear correlation is observed between the simulated electric-field distortion and the reconstructed interaction-depth dependent effective size.

Document type Article
Language English
Published at https://doi.org/10.1088/1748-0221/6/11/C11019
Other links https://www.scopus.com/pages/publications/82955201748
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