Tight-binding simulation of silicon and germanium nanocrystals
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| Publication date | 2017 |
| Journal | Semiconductors |
| Volume | Issue number | 51 | 10 |
| Pages (from-to) | 1274-1289 |
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| Abstract |
This review is devoted to the modeling of Si and Ge nanocrystals by means of the tight-binding method. First we give the short outline of the modeling methods and their application for the discription of silicon and germanium nanocrystals. Then, the tight-binding method with extended s, p, d, and s* basis is explained in details and the results obtained with the use of this method are presented. |
| Document type | Review article |
| Note | Original Russian Text © A.V. Gert, M.O. Nestoklon, A.A. Prokofiev, I.N. Yassievich, 2017, published in Fizika i Tekhnika Poluprovodnikov, 2017, Vol. 51, No. 10, pp. 1325–1340. |
| Language | English |
| Published at | https://doi.org/10.1134/S1063782617100098 |
| Other links | https://www.scopus.com/pages/publications/85031118446 |
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