Photoluminescence of erbium-doped silicon: excitation power dependence, (In: Semicond.)

Authors
Publication date 1999
Journal Semiconductors
Volume | Issue number 33
Pages (from-to) 598-602
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Document type Article
Published at
https://doi.org/10.1134/1.1187736 (Final published version)
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