Correlation-Driven Insulator-Metal Transition in Near-Ideal Vanadium Dioxide Films

Open Access
Authors
  • Z. Chen
  • R. Kukreja
  • D. Higley
  • T. Chase
  • A.H. Reid
  • H. Ohldag
  • M.A. Marcus
  • A. Scholl
  • A.T. Young
  • A. Doran
  • C.A. Jenkins
  • P. Shafer
  • E. Arenholz
  • M.G. Samant
  • S.S.P. Parkin
  • H.A. Dürr
Publication date 18-03-2016
Journal Physical Review Letters
Article number 116403
Volume | Issue number 116 | 11
Number of pages 6
Organisations
  • Faculty of Science (FNWI)
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Institute for High Energy Physics (IHEF)
  • Faculty of Science (FNWI) - Institute of Physics (IoP)
Abstract

We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction, and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO2 films are preceded by the purely electronic softening of Coulomb correlations within V-V singlet dimers. This process starts 7 K (±0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperature insulator-metal transition in this technologically promising material.

Document type Article
Note © 2016 American Physical Society. - With supplemental material
Language English
Published at https://doi.org/10.1103/PhysRevLett.116.116403
Other links https://www.scopus.com/pages/publications/84962278035
Downloads
PhysRevLett.116.116403 (Final published version)
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