Proceedings of the ASME 2009 International Design Engineering Technical Conferences & Computers and Information in Engineering Conference (IDETC/CIE 2009), San Diego, CA, USA: Volume 2: 29th Computers and Information in Engineering Conference
ISBN
9780791848999
Event
29th Computers and Information in Engineering Conference (CIE 2009), San Diego, CA, USA
Pages (from-to)
1197-1198 (DETC2009-87087)
Publisher
New York: ASME
Organisations
Faculty of Science (FNWI) - Informatics Institute (IVI)
Abstract
Laser annealing technology is used in mass production of new-generation semiconductor materials and nano-electronic devices like the MOS-based (metal-oxide-semiconductor) integrated circuits. Manufacturing sub-100 nm MOS devices demands application of ultra-shallow doping (junctions), which requires rapid high-temperature annealing to increase dopant electrical activation and remove implantation defects in the silicon [1].
