Computer simulation of laser annealing of a nanostructured surface
| Authors |
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| Publication date | 2010 |
| Book title | Proceedings of the ASME 2009 International Design Engineering Technical Conferences & Computers and Information in Engineering Conference (IDETC/CIE 2009), San Diego, CA, USA: Volume 2: 29th Computers and Information in Engineering Conference |
| ISBN |
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| Event | 29th Computers and Information in Engineering Conference (CIE 2009), San Diego, CA, USA |
| Pages (from-to) | 1197-1198 (DETC2009-87087) |
| Publisher | New York: ASME |
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| Abstract | Laser annealing technology is used in mass production of new-generation semiconductor materials and nano-electronic devices like the MOS-based (metal-oxide-semiconductor) integrated circuits. Manufacturing sub-100 nm MOS devices demands application of ultra-shallow doping (junctions), which requires rapid high-temperature annealing to increase dopant electrical activation and remove implantation defects in the silicon [1]. |
| Document type | Conference contribution |
| Note | Ivanov2009a |
| Language | English |
| Published at |
https://doi.org/10.1115/DETC2009-87087
(Final published version)
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