Ultrahigh throughput plasma processing of free standing silicon nanocrystals with lognormal size distribution

Open Access
Authors
Publication date 2013
Journal Journal of Applied Physics
Volume | Issue number 113 | 13
Pages (from-to) 134306
Number of pages 10
Organisations
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Van der Waals-Zeeman Institute (WZI)
Abstract
We demonstrate a method for synthesizing free standing silicon nanocrystals in an argon/silane gas mixture by using a remote expanding thermal plasma. Transmission electron microscopy and Raman spectroscopy measurements reveal that the distribution has a bimodal shape consisting of two distinct groups of small and large silicon nanocrystals with sizes in the range 2-10 nm and 50-120 nm, respectively. We also observe that both size distributions are lognormal which is linked with the growth time and transport of nanocrystals in the plasma. Average size control is achieved by tuning the silane flow injected into the vessel. Analyses on morphological features show that nanocrystals are monocrystalline and spherically shaped. These results imply that formation of silicon nanocrystals is based on nucleation, i.e., these large nanocrystals are not the result of coalescence of small nanocrystals. Photoluminescence measurements show that silicon nanocrystals exhibit a broad emission in the visible region peaked at 725 nm. Nanocrystals are produced with ultrahigh throughput of about 100 mg/min and have state of the art properties, such as controlled size distribution, easy handling, and room temperature visible photoluminescence.
Document type Article
Language English
Published at https://doi.org/10.1063/1.4799402
Downloads
Ultrahigh_throughput_plasma_processing.pdf (Final published version)
Permalink to this page
Back