Edge-on illumination photon-counting for medical imaging

Authors
Publication date 08-2015
Journal Journal of Instrumentation
Article number C08011
Volume | Issue number 10
Organisations
  • Faculty of Science (FNWI)
  • Faculty of Science (FNWI) - Institute of Physics (IoP) - Institute for High Energy Physics (IHEF)
  • Faculty of Science (FNWI) - Institute of Physics (IoP)
Abstract
In medical X-ray Computed Tomography (CT) a silicon based sensor (300–1000 μm) in face-on configuration does not collect the incoming X-rays effectively because of their high energy (40–140 keV). For example, only 2% of the incoming photons at 100 keV are stopped by a 500 μm thick silicon layer. To increase the efficiency, one possibility is to use materials with higher Z (e.g. GaAs, CZT), which have some drawbacks compared to silicon, such as short carrier lifetime or low mobility. Therefore, we investigate whether illuminating silicon edge-on instead of face-on is a solution. Aim of the project is to find and take advantage of the benefits of this new geometry when used for a pixel detector. In particular, we employ a silicon hybrid pixel detector, which is read out by a chip from the Medipix family. Its capabilities to be energy selective will be a notable advantage in energy resolved (spectral) X-ray CT.
Document type Article
Language English
Published at https://doi.org/10.1088/1748-0221/10/08/C08011
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