- Fast dynamics of 1.5 μm photoluminescence in Er-doped SiO2 sensitized with Si nanocrystals
- Optical Materials
- Volume | Issue number
- 33 | 7
- Pages (from-to)
- Document type
- Faculty of Science (FNWI)
- Van der Waals-Zeeman Institute (WZI)
In order to investigate origin of fast photoluminescence at 1.5 μm reported to appear in Er-doped SiO2 sensitized with silicon nanocrystals, time-resolved photoluminescence measurements were compared between high temperature annealed Er-doped and Er-free samples. We confirm that this fast photoluminescence band observed in our materials is due to radiative recombination of Er3+ ions. At low temperatures, also a contribution from defect related-emission centered around 1300 nm appears and adds up to the Er-related emission.
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