- Investigation of optical gain in Eu-doped GaN thin film grown by OMVPE method
- Journal of Science: Advanced Materials and Devices
- Volume | Issue number
- 1 | 2
- Pages (from-to)
- Number of pages
- Document type
- Faculty of Science (FNWI)
- Institute of Physics (IoP)
Van der Waals-Zeeman Institute (WZI)
Institute for High Energy Physics (IHEF)
We prepare and optically characterize a thin film of GaN:Eu. Room temperature intense emission band at around 620 nm is observed, corresponding to 5D0 → 7F2 electronic dipole transition of Eu3+ ions in the GaN host material. At lower temperatures, three components, at 621, 622, and 623 nm, arising from different Eu3+ optical centers, can be distinguished. Using a combination of variable stripe length (VSL) and shifting excitation spot (SES) methods we investigate optical gain of this Eu-related PL band at room temperature and determine its lower limit to be approximately 14 cm−1.
- go to publisher's site
- In: Special Issue in Memory of Dr. P.E. Brommer
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