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Record: oai:ARNO:422433

AuthorsW.D.A.M. de Boer, D. Timmerman, T. Gregorkiewicz, H. Zhang, W.J. Buma, A. N. Poddubny, A.A. Prokofiev, I.N. Yassievich
TitleSelf-trapped exciton state in Si nanocrystals revealed by induced absorption
JournalPhysical Review B
FacultyFaculty of Science
Institute/dept.FNWI: Van der Waals-Zeeman Institute (WZI)
FNWI: Van 't Hoff Institute for Molecular Sciences (HIMS)
AbstractWe report results of time-resolved induced absorption (IA) spectroscopy on Si nanocrystals (Si NCs) embedded in a SiO2 matrix. In line with theoretical modeling, the IA amplitude decreases with probing photon energy, however only until a certain threshold value. For larger photon energies, an increase of IA is observed. This unexpected behavior is interpreted in terms of the self-trapped exciton state whose formation in Si NCs was put forward some time ago based on theoretical considerations. Here, we present a direct experimental confirmation of this supposition.
Document typeArticle
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