The UvA-LINKER will give you a range of other options to find the full text of a publication (including a direct link to the full-text if it is located on another database on the internet).
De UvA-LINKER biedt mogelijkheden om een publicatie elders te vinden (inclusief een directe link naar de publicatie online als deze beschikbaar is in een database op het internet).

Zoekresultaten

Zoekopdracht: journal id: "physicalxreviewxb"

AuteursN.N. Ha, K. Dohnalová, T. Gregorkiewicz, J. Valenta
TitelOptical gain of the 1.54 μm emission in MBE-grown Si:Er nanolayers
TijdschriftPhysical Review B
Jaargang81
Jaar2010
Nummer19
Pagina's195206-195206
ISSN10980121
FaculteitFaculteit der Natuurwetenschappen, Wiskunde en Informatica
Instituut/afd.FNWI: Van der Waals-Zeeman Institute (WZI)
SamenvattingWe present investigations of the optical gain cross section of 1.54 μm Er-related emission at 4.2 K in Si/Si:Er molecular-beam-epitaxy-grown multinanolayers. This ultranarrow (full width at half maximum below 8 μeV) emission originating from the unique Er-related optical complex, Er-1 center, ensures the best condition to achieve stimulated emission. The experiments were carried out using a combination of the variable stripe length and shifting excitation spot techniques under pulsed and continuous-wave excitations. The comparison of results for both excitation regimes enables to estimate an optical gain within the strong optical losses due to the free carrier absorption. Based on these measurements, the upper limit of the optical gain cross section of 10−17 cm2 and the gain coefficient of 8.8 cm−1 are deduced.
Soort documentArtikel
Download bestand
Document finderUvA-Linker