| Authors||R. Turchetta, A. Fant, P. Gasiorek, C. Esbrand, J.A. Griffiths, M.G. Metaxas, G.J. Royle, R. Speller, C. Venanzi, P.F. van der Stelt, H. Verheij, G. Li, S. Theodoridis, H. Georgiou, D. Cavouras, G. Hall, M. Noy, J. Jones, J. Leaver, D. Machin, S. Greenwood, M. Khaleeq, H. Schulerud, J.M. Østby, F. Triantis, A. Asimidis, D. Bolanakis, N. Manthos, R. Longo, A. Bergamaschi|
|Title||CMOS Monolithic Active Pixel Sensors (MAPS): developments and future outlook|
|Journal||Nuclear Instruments & Methods in Physics Research Section A - Accelerators Spectrometers Detectors and Associated Equipment|
|Abstract||Re-invented in the early 1990s, on both sides of the Atlantic, Monolithic Active Pixel Sensors (MAPS) in a CMOS technology are today the most sold solid-state imaging devices, overtaking the traditional technology of Charge-Coupled Devices (CCD). The slow uptake of CMOS MAPS started with low-end applications, for example web-cams, and is slowly pervading the high-end applications, for example in prosumer digital cameras. Higher specifications are required for scientific applications: very low noise, high speed, high dynamic range, large format and radiation hardness are some of these requirements.
This paper will present a brief overview of the CMOS Image Sensor technology and of the requirements for scientific applications. As an example, a sensor for X-ray imaging will be presented. This sensor was developed within a European FP6 Consortium, intelligent imaging sensors (I-ImaS).|
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